IndiumV3, Chine, Analysis, bibRecord, 001852

Applications of ICP in optoelectronic device fabrication

Identifieur interne : 001852 ( Chine/Analysis ); précédent : 001851; suivant : 001853

Applications of ICP in optoelectronic device fabrication

Auteurs : RBID : Pascal:05-0240407

Descripteurs français

Pascal (Inist)
- Dispositif optoélectronique, Procédé voie sèche, Gravure sèche, Densité élevée, Densité ion, Plasma couplé inductivement, Surface lisse, Vitesse gravure, Laser semiconducteur, Endommagement, Laser accordable, Profil vertical, Laser émission surface, Laser cavité verticale, Microscopie optique, Microscopie électronique balayage, Indium phosphure, Composé binaire, Silicium nitrure, Gallium arséniure, Aluminium arséniure, Composé ternaire, 4255P, In P, InP, N Si, SiNx, As Ga, GaAs, Al As Ga, AlGaAs.

English descriptors

KwdEn :
- Aluminium arsenides, Binary compound, Damaging, Dry etching, Dry process, Etching rate, Gallium arsenides, High density, Indium phosphide, Inductively coupled plasma, Ion density, Optical microscopy, Optoelectronic device, Scanning electron microscopy, Semiconductor laser, Silicon nitride, Smooth surface, Surface emitting laser, Ternary compound, Tunable laser, Vertical cavity laser, Vertical profile.

Abstract

Three dry etching processes using a high ion density inductively coupled plasma (ICP) system in fabrication of optoelectronic device have been briefly presented in this paper. Smooth etched surface, high rate and selectivity ICP InP etching using Cl₂/CH₄/N₂ have been demonstrated first time in fabrications of semiconductor laser. Low damage CH₄/H₂ ICP InP sub-micron grating etching using SiN_x mask can be used for SG-DBR tunable laser fabrication. Anisotropic Cl₂/CH₄/Ar ICP etching with vertical profile has been used for GaAs/AlGaAs DBR layers etching in vertical cavity surface emitting laser (VCSEL) fabrication. The etching characteristics have been investigated by conventional optical microscopy and scanning electron microscopy (SEM).

Links toward previous steps (curation, corpus...)

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to stream Main, to step Repository: 00A242
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Links to Exploration step

Pascal:05-0240407

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Applications of ICP in optoelectronic device fabrication</title>
<author><name>YI GAN</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Accelink Technologies Co.,Ltd, 88 YouKeyuan Road</s1>
<s2>Wuhan 430074</s2>
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<country>République populaire de Chine</country>
<wicri:noRegion>Wuhan 430074</wicri:noRegion>
</affiliation>
</author>
<author><name>JUN ZHANG</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Accelink Technologies Co.,Ltd, 88 YouKeyuan Road</s1>
<s2>Wuhan 430074</s2>
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</author>
<author><name>SHAN JIANG</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Accelink Technologies Co.,Ltd, 88 YouKeyuan Road</s1>
<s2>Wuhan 430074</s2>
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</author>
<author><name>XIAODONG HUANG</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Accelink Technologies Co.,Ltd, 88 YouKeyuan Road</s1>
<s2>Wuhan 430074</s2>
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<country>République populaire de Chine</country>
<wicri:noRegion>Wuhan 430074</wicri:noRegion>
</affiliation>
</author>
<author><name>NING ZHOU</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Accelink Technologies Co.,Ltd, 88 YouKeyuan Road</s1>
<s2>Wuhan 430074</s2>
<s3>CHN</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
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<country>République populaire de Chine</country>
<wicri:noRegion>Wuhan 430074</wicri:noRegion>
</affiliation>
</author>
<author><name>LIGANG DENG</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Oxford Instruments Plasma Technology, North End</s1>
<s2>Yatton, Bristol</s2>
<s3>GBR</s3>
<sZ>6 aut.</sZ>
</inist:fA14>
<country>Royaume-Uni</country>
<wicri:noRegion>Yatton, Bristol</wicri:noRegion>
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<date when="2005">2005</date>
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<title level="j" type="main">SPIE proceedings series</title>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium arsenides</term>
<term>Binary compound</term>
<term>Damaging</term>
<term>Dry etching</term>
<term>Dry process</term>
<term>Etching rate</term>
<term>Gallium arsenides</term>
<term>High density</term>
<term>Indium phosphide</term>
<term>Inductively coupled plasma</term>
<term>Ion density</term>
<term>Optical microscopy</term>
<term>Optoelectronic device</term>
<term>Scanning electron microscopy</term>
<term>Semiconductor laser</term>
<term>Silicon nitride</term>
<term>Smooth surface</term>
<term>Surface emitting laser</term>
<term>Ternary compound</term>
<term>Tunable laser</term>
<term>Vertical cavity laser</term>
<term>Vertical profile</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Dispositif optoélectronique</term>
<term>Procédé voie sèche</term>
<term>Gravure sèche</term>
<term>Densité élevée</term>
<term>Densité ion</term>
<term>Plasma couplé inductivement</term>
<term>Surface lisse</term>
<term>Vitesse gravure</term>
<term>Laser semiconducteur</term>
<term>Endommagement</term>
<term>Laser accordable</term>
<term>Profil vertical</term>
<term>Laser émission surface</term>
<term>Laser cavité verticale</term>
<term>Microscopie optique</term>
<term>Microscopie électronique balayage</term>
<term>Indium phosphure</term>
<term>Composé binaire</term>
<term>Silicium nitrure</term>
<term>Gallium arséniure</term>
<term>Aluminium arséniure</term>
<term>Composé ternaire</term>
<term>4255P</term>
<term>In P</term>
<term>InP</term>
<term>N Si</term>
<term>SiNx</term>
<term>As Ga</term>
<term>GaAs</term>
<term>Al As Ga</term>
<term>AlGaAs</term>
</keywords>
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<front><div type="abstract" xml:lang="en">Three dry etching processes using a high ion density inductively coupled plasma (ICP) system in fabrication of optoelectronic device have been briefly presented in this paper. Smooth etched surface, high rate and selectivity ICP InP etching using Cl<sub>2</sub>
/CH<sub>4</sub>
/N<sub>2</sub>
 have been demonstrated first time in fabrications of semiconductor laser. Low damage CH<sub>4</sub>
/H<sub>2</sub>
 ICP InP sub-micron grating etching using SiN<sub>x</sub>
 mask can be used for SG-DBR tunable laser fabrication. Anisotropic Cl<sub>2</sub>
/CH<sub>4</sub>
/Ar ICP etching with vertical profile has been used for GaAs/AlGaAs DBR layers etching in vertical cavity surface emitting laser (VCSEL) fabrication. The etching characteristics have been investigated by conventional optical microscopy and scanning electron microscopy (SEM).</div>
</front>
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<fA08 i1="01" i2="1" l="ENG"><s1>Applications of ICP in optoelectronic device fabrication</s1>
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<fA09 i1="01" i2="1" l="ENG"><s1>Semiconductor and organic optoelectronic materials and devices : Beijing, 9-11 November 2004</s1>
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<fA11 i1="01" i2="1"><s1>YI GAN</s1>
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<fA11 i1="02" i2="1"><s1>JUN ZHANG</s1>
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<fA11 i1="03" i2="1"><s1>SHAN JIANG</s1>
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<fA11 i1="04" i2="1"><s1>XIAODONG HUANG</s1>
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<fA11 i1="05" i2="1"><s1>NING ZHOU</s1>
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<fA12 i1="01" i2="1"><s1>CHUNG-EN ZAH</s1>
<s9>ed.</s9>
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<fA12 i1="02" i2="1"><s1>YI LUO</s1>
<s9>ed.</s9>
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<fA12 i1="03" i2="1"><s1>SHINJI TSUJI</s1>
<s9>ed.</s9>
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<fA14 i1="01"><s1>Accelink Technologies Co.,Ltd, 88 YouKeyuan Road</s1>
<s2>Wuhan 430074</s2>
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<sZ>1 aut.</sZ>
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<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
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<fA14 i1="02"><s1>Oxford Instruments Plasma Technology, North End</s1>
<s2>Yatton, Bristol</s2>
<s3>GBR</s3>
<sZ>6 aut.</sZ>
</fA14>
<fA18 i1="01" i2="1"><s1>International Society for Optical Engineering</s1>
<s2>Bellingham WA</s2>
<s3>USA</s3>
<s9>patr.</s9>
</fA18>
<fA20><s1>152-160</s1>
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<fA21><s1>2005</s1>
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</fA66>
<fC01 i1="01" l="ENG"><s0>Three dry etching processes using a high ion density inductively coupled plasma (ICP) system in fabrication of optoelectronic device have been briefly presented in this paper. Smooth etched surface, high rate and selectivity ICP InP etching using Cl<sub>2</sub>
/CH<sub>4</sub>
/N<sub>2</sub>
 have been demonstrated first time in fabrications of semiconductor laser. Low damage CH<sub>4</sub>
/H<sub>2</sub>
 ICP InP sub-micron grating etching using SiN<sub>x</sub>
 mask can be used for SG-DBR tunable laser fabrication. Anisotropic Cl<sub>2</sub>
/CH<sub>4</sub>
/Ar ICP etching with vertical profile has been used for GaAs/AlGaAs DBR layers etching in vertical cavity surface emitting laser (VCSEL) fabrication. The etching characteristics have been investigated by conventional optical microscopy and scanning electron microscopy (SEM).</s0>
</fC01>
<fC02 i1="01" i2="X"><s0>001D03F15</s0>
</fC02>
<fC03 i1="01" i2="X" l="FRE"><s0>Dispositif optoélectronique</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="X" l="ENG"><s0>Optoelectronic device</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="X" l="SPA"><s0>Dispositivo optoelectrónico</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="X" l="FRE"><s0>Procédé voie sèche</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="ENG"><s0>Dry process</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="SPA"><s0>Procedimiento vía seca</s0>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="X" l="FRE"><s0>Gravure sèche</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="ENG"><s0>Dry etching</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="SPA"><s0>Grabado seco</s0>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="X" l="FRE"><s0>Densité élevée</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="ENG"><s0>High density</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="SPA"><s0>Densidad elevada</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="X" l="FRE"><s0>Densité ion</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="ENG"><s0>Ion density</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="SPA"><s0>Densidad ión</s0>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Plasma couplé inductivement</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Inductively coupled plasma</s0>
<s5>06</s5>
</fC03>
<fC03 i1="07" i2="X" l="FRE"><s0>Surface lisse</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="X" l="ENG"><s0>Smooth surface</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="X" l="SPA"><s0>Superficie lisa</s0>
<s5>07</s5>
</fC03>
<fC03 i1="08" i2="X" l="FRE"><s0>Vitesse gravure</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="ENG"><s0>Etching rate</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="SPA"><s0>Velocidad grabado</s0>
<s5>08</s5>
</fC03>
<fC03 i1="09" i2="X" l="FRE"><s0>Laser semiconducteur</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="X" l="ENG"><s0>Semiconductor laser</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="X" l="SPA"><s0>Laser semiconductor</s0>
<s5>09</s5>
</fC03>
<fC03 i1="10" i2="X" l="FRE"><s0>Endommagement</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="X" l="ENG"><s0>Damaging</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="X" l="SPA"><s0>Deterioración</s0>
<s5>10</s5>
</fC03>
<fC03 i1="11" i2="X" l="FRE"><s0>Laser accordable</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="ENG"><s0>Tunable laser</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="SPA"><s0>Laser acordable</s0>
<s5>11</s5>
</fC03>
<fC03 i1="12" i2="X" l="FRE"><s0>Profil vertical</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="X" l="ENG"><s0>Vertical profile</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="X" l="SPA"><s0>Perfil vertical</s0>
<s5>12</s5>
</fC03>
<fC03 i1="13" i2="X" l="FRE"><s0>Laser émission surface</s0>
<s5>13</s5>
</fC03>
<fC03 i1="13" i2="X" l="ENG"><s0>Surface emitting laser</s0>
<s5>13</s5>
</fC03>
<fC03 i1="13" i2="X" l="SPA"><s0>Laser emisión superficie</s0>
<s5>13</s5>
</fC03>
<fC03 i1="14" i2="X" l="FRE"><s0>Laser cavité verticale</s0>
<s5>14</s5>
</fC03>
<fC03 i1="14" i2="X" l="ENG"><s0>Vertical cavity laser</s0>
<s5>14</s5>
</fC03>
<fC03 i1="14" i2="X" l="SPA"><s0>Laser cavidad vertical</s0>
<s5>14</s5>
</fC03>
<fC03 i1="15" i2="X" l="FRE"><s0>Microscopie optique</s0>
<s5>15</s5>
</fC03>
<fC03 i1="15" i2="X" l="ENG"><s0>Optical microscopy</s0>
<s5>15</s5>
</fC03>
<fC03 i1="15" i2="X" l="SPA"><s0>Microscopía óptica</s0>
<s5>15</s5>
</fC03>
<fC03 i1="16" i2="X" l="FRE"><s0>Microscopie électronique balayage</s0>
<s5>16</s5>
</fC03>
<fC03 i1="16" i2="X" l="ENG"><s0>Scanning electron microscopy</s0>
<s5>16</s5>
</fC03>
<fC03 i1="16" i2="X" l="SPA"><s0>Microscopía electrónica barrido</s0>
<s5>16</s5>
</fC03>
<fC03 i1="17" i2="X" l="FRE"><s0>Indium phosphure</s0>
<s5>22</s5>
</fC03>
<fC03 i1="17" i2="X" l="ENG"><s0>Indium phosphide</s0>
<s5>22</s5>
</fC03>
<fC03 i1="17" i2="X" l="SPA"><s0>Indio fosfuro</s0>
<s5>22</s5>
</fC03>
<fC03 i1="18" i2="X" l="FRE"><s0>Composé binaire</s0>
<s5>23</s5>
</fC03>
<fC03 i1="18" i2="X" l="ENG"><s0>Binary compound</s0>
<s5>23</s5>
</fC03>
<fC03 i1="18" i2="X" l="SPA"><s0>Compuesto binario</s0>
<s5>23</s5>
</fC03>
<fC03 i1="19" i2="X" l="FRE"><s0>Silicium nitrure</s0>
<s5>24</s5>
</fC03>
<fC03 i1="19" i2="X" l="ENG"><s0>Silicon nitride</s0>
<s5>24</s5>
</fC03>
<fC03 i1="19" i2="X" l="SPA"><s0>Silicio nitruro</s0>
<s5>24</s5>
</fC03>
<fC03 i1="20" i2="3" l="FRE"><s0>Gallium arséniure</s0>
<s2>NK</s2>
<s5>25</s5>
</fC03>
<fC03 i1="20" i2="3" l="ENG"><s0>Gallium arsenides</s0>
<s2>NK</s2>
<s5>25</s5>
</fC03>
<fC03 i1="21" i2="3" l="FRE"><s0>Aluminium arséniure</s0>
<s2>NK</s2>
<s5>26</s5>
</fC03>
<fC03 i1="21" i2="3" l="ENG"><s0>Aluminium arsenides</s0>
<s2>NK</s2>
<s5>26</s5>
</fC03>
<fC03 i1="22" i2="X" l="FRE"><s0>Composé ternaire</s0>
<s5>27</s5>
</fC03>
<fC03 i1="22" i2="X" l="ENG"><s0>Ternary compound</s0>
<s5>27</s5>
</fC03>
<fC03 i1="22" i2="X" l="SPA"><s0>Compuesto ternario</s0>
<s5>27</s5>
</fC03>
<fC03 i1="23" i2="X" l="FRE"><s0>4255P</s0>
<s4>INC</s4>
<s5>56</s5>
</fC03>
<fC03 i1="24" i2="X" l="FRE"><s0>In P</s0>
<s4>INC</s4>
<s5>82</s5>
</fC03>
<fC03 i1="25" i2="X" l="FRE"><s0>InP</s0>
<s4>INC</s4>
<s5>83</s5>
</fC03>
<fC03 i1="26" i2="X" l="FRE"><s0>N Si</s0>
<s4>INC</s4>
<s5>84</s5>
</fC03>
<fC03 i1="27" i2="X" l="FRE"><s0>SiNx</s0>
<s4>INC</s4>
<s5>85</s5>
</fC03>
<fC03 i1="28" i2="X" l="FRE"><s0>As Ga</s0>
<s4>INC</s4>
<s5>86</s5>
</fC03>
<fC03 i1="29" i2="X" l="FRE"><s0>GaAs</s0>
<s4>INC</s4>
<s5>87</s5>
</fC03>
<fC03 i1="30" i2="X" l="FRE"><s0>Al As Ga</s0>
<s4>INC</s4>
<s5>88</s5>
</fC03>
<fC03 i1="31" i2="X" l="FRE"><s0>AlGaAs</s0>
<s4>INC</s4>
<s5>89</s5>
</fC03>
<fN21><s1>164</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
<pR><fA30 i1="01" i2="1" l="ENG"><s1>Semiconductor and organic optoelectronic materials and devices. Conference</s1>
<s3>Beijing CHN</s3>
<s4>2004-11-09</s4>
</fA30>
</pR>
</standard>
</inist>
</record>

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Applications of ICP in optoelectronic device fabrication

Applications of ICP in optoelectronic device fabrication

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